| TYPE | DESCRIPTION |
|---|
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 1000 V |
| Continuous Drain Current (Ids) | 20A |
N-Channel Enhancement Mode
●Avalanche Rated
●Low Qg and Rg
●High dv/dt
●Nanosecond Switching
●Features
●• Isolated Substrate
● − high isolation voltage (>2500V)
● − excellent thermal transfer
● − Increased temperature and power cycling capability
●• IXYS advanced low Qg process
●• Low gate charge and capacitances
● − easier to drive
● − faster switching
●• Low RDS(on)
●• Very low insertion inductance (<2nH)
●• No beryllium oxide (BeO) or other hazardous materials
●Advantages
●• Optimized for RF and high speed switching at frequencies to 30MHz
●• Easy to mountóno insulators needed
●• High power density
IXYS Semiconductor
3 Pages / 0.07 MByte
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