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M28W640HCB70N6FDatasheet PDF
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November 2008 Rev 3 1/72
1
M28W640HCT
M28W640HCB
64 Mbit (4 Mb x 16, boot block)
3 V supply Flash memory
Features
Supply voltage
–V
DD
= 2.7 V to 3.6 V
–V
PP
= 12 V for fast program (optional)
Access times: 70 ns
Asynchronous Page Read mode
– Page width: 4 words
– Page access: 25 ns
– Random access: 70 ns
Programming time:
–10μs typical
– Double Word Programming option
– Quadruple Word Programming option
Common Flash interface
Memory blocks
– Parameter blocks (top or bottom location)
– Main blocks
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
–WP
for block lock-down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device identifier
Automatic standby mode
Program and Erase Suspend
100,000 program/erase cycles per block
Electronic signature
– Manufacturer code: 20h
– Top device code, M28W640HCT: 8848h
– Bottom device code, M28W640HCB:
8849h
Packages
– RoHS compliant
TSOP48 (N)
12 x 20 mm
FBGA
TFBGA48 (ZB)
6.39 x 10.5 mm
www.numonyx.com
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