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NAND512W3A2CN6
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1/56August 2005
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
Up to 1 Gbit memory array
Up to 32 Mbit spare area
Cost effective solutions for mass storage
applications
NAND INTERFACE
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
SUPPLY VOLTAGE
1.8V device: V
DD
= 1.7 to 1.95V
3.0V device: V
DD
= 2.7 to 3.6V
PAGE SIZE
x8 device: (512 + 16 spare) Bytes
x16 device: (256 + 8 spare) Words
BLOCK SIZE
x8 device: (16K + 512 spare) Bytes
x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
Random access: 12µs (3V)/15us (1.8V)
(max)
Sequential access: 50ns (min)
Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
Fast page copy without external buffering
FAST BLOCK ERASE
Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’
Simple interface with microcontroller
SERIAL NUMBER OPTION
Figure 1. Packages
HARDWARE DATA PROTECTION
Program/Erase locked during Power
transitions
DATA INTEGRITY
100,000 Program/Erase cycles
10 years Data Retention
RoHS COMPLIANCE
Lead-Free Components are Compliant
with the RoHS Directive
DEVELOPMENT TOOLS
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference software
Hardware simulation models
TSOP48 12 x 20mm
VFBGA55 8 x 10 x 1mm
VFBGA63 9 x 11 x 1mm
FBGA
USOP48 12 x 17 x 0.65mm

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