| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 62.0 A |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.0229 Ω |
| Polarity | N-Channel |
| Power Dissipation | 260 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 7.23 nF |
| Gate Charge | 99.0 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 62.0 A |
| Rise Time | 284 ns |
| Input Capacitance (Ciss) | 7230pF @25V(Vds) |
| Input Power (Max) | 260 W |
| Fall Time | 162 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 260W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 11.33 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDB2614 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification and battery protection circuit.
● High performance Trench technology for extremely low RDS (ON)
● Low gate charge
● High power and current handing capability
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