| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -80.0 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.018 Ω |
| Polarity | P-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Breakdown Voltage (Gate to Source) | ±16.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 190 ns |
| Input Capacitance (Ciss) | 5500pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 80 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The STP80PF55 is a P-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
● Extremely dv/dt capability
● 100% Avalanche tested
● Application oriented characterization
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