| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -50.0 V |
| Current Rating | -100 mA |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Polarity | PNP |
| Power Dissipation | 246 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 80 @5mA, 10V |
| Input Power (Max) | 246 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Look no further than ON Semiconductor"s PNP MMUN2113LT1G digital transistor"s, the ideal component to use when designing a digital signal processing unit. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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