| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Capacitance | 1600 pF |
| Case/Package | DO-216AA |
| Power Rating | 200 W |
| Breakdown Voltage | 6.4 V |
| Number of Circuits | 1 Circuit |
| Number of Positions | 2 Position |
| Power Dissipation | 200 W |
| Clamping Voltage | 9.2 V |
| Max Repetitive Reverse Voltage (Vrrm) | 5V |
| Test Current | 10 mA |
| Max Breakdown Voltage | 6.4 V |
| Peak Pulse Power | 200 W |
| Min Breakdown Voltage | 6.4 V |
| Reverse Breakdown Voltage | 6.4 V |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Junction Temperature | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.75 mm |
| Size-Width | 2.05 mm |
| Size-Height | 1.15 mm |
| Operating Temperature | -65℃ ~ 150℃ |
Prevent your circuits from experiencing malfunctions from electrostatic discharge with this SM2T6V8A TVS diode from STMicroelectronics. Its peak pulse power dissipation is 200 W. Its maximum leakage current is 50 μA. This device"s maximum clamping voltage is 9.2 V and minimum breakdown voltage is 6.4 V. Its test current is 10 mA. This TVS diode has an operating temperature range of -65 °C to 150 °C. This product will be shipped in tape and reel packaging so that components can be mounted effectively.
ST Microelectronics
6 Pages / 0.05 MByte
ST Microelectronics
7 Pages / 0.04 MByte
ST Microelectronics
5 Pages / 0.04 MByte
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