| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 52.0 A |
| Case/Package | TO-263-3 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 0.041 Ω |
| Polarity | N-Channel |
| Power Dissipation | 357 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 2.90 nF |
| Gate Charge | 63.0 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Gate to Source) | 200 V |
| Continuous Drain Current (Ids) | 52.0 A |
| Rise Time | 175 ns |
| Input Capacitance (Ciss) | 2900pF @25V(Vds) |
| Input Power (Max) | 357 W |
| Fall Time | 29 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 357 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 9.98 mm |
| Size-Width | 10.16 mm |
| Size-Height | 4.572 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDB52N20TM is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power and ATX.
● 100% Avalanche tested
● 49nC Typical low gate charge
● 66pF Typical low Crss
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