| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -4.00 A |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.041 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.6 W |
| Input Capacitance | 750 pF |
| Gate Charge | 8.00 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | -30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | -4.00 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 750pF @15V(Vds) |
| Input Power (Max) | 800 mW |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.6W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDC658P is a logic level single P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited load switching, battery charging circuits and DC-to-DC conversion.
● High performance Trench technology for extremely low RDS (ON)
● 8nC Typical low gate charge
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