| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -1.80 A |
| Case/Package | TSOT-23-6 |
| Power Rating | 0.96 W |
| Number of Channels | 2 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 170 mΩ |
| Polarity | P-Channel, Dual N-Channel, Dual P-Channel |
| Power Dissipation | 960 mW |
| Input Capacitance | 190 pF |
| Gate Charge | 2.30 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 1.80 A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 190pF @15V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.96 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDC6506P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● Small footprint
● Low profile
Fairchild
5 Pages / 0.06 MByte
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Dual P-Channel Logic Level PowerTrench MOSFET
Fairchild
FAIRCHILD SEMICONDUCTOR FDC6506P Dual MOSFET, Dual P Channel, 3A, -30V, 170mohm, -10V, -1.8V
ON Semiconductor
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 2Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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