FDC6506 Datasheet PDF - Fairchild

General Description

●These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor"s advanced PowerTrench

●process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for

●superior switching performance.

●Features

●• -1.8 A, -30 V. RDS(on)= 0.170 Ω @ VGS = -10 V

●                    RDS(on) = 0.280 Ω @ VGS = -4.5 V

●• Low gate charge (2.3nC typical).

●• Fast switching speed.

●•High performance trench technology for extremely low RDS(ON).

●• SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

●Applications

●• Load switch

●•Battery protection

●•Power management