| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.022 Ω |
| Power Dissipation | 3.8 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 100 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 2490pF @15V(Vds) |
| Input Power (Max) | 1.6 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
The FDD3670 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 57nC Typical low gate charge
ON Semiconductor
5 Pages / 0.15 MByte
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7 Pages / 0.87 MByte
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