TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Supply Voltage (DC) | 5.00 V |
Voltage Rating (DC) | 30.0 V |
Operating Voltage | 5.00 V |
Case/Package | T-1 |
Number of Positions | 2 Position |
Wavelength | 935 nm |
Viewing Angle | 60° |
Peak Wavelength | 935 nm |
Polarity | NPN |
Power Dissipation | 100 mW |
Power Consumption | 100 mW |
Breakdown Voltage (Collector to Emitter) | 30 V |
Input Power (Max) | 100 mW |
Operating Temperature (Max) | 100 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Each |
Material | Silicon |
Size-Length | 4.57 mm |
Size-Width | 2.54 mm |
Size-Height | 5.84 mm |
Lead Length | 12.7 mm |
Operating Temperature | -40℃ ~ 100℃ (TA) |
Housing Material | Plastic |
The OP550A is a NPN Silicon Phototransistor with wide receiving angle. The OP550 series devices consist of NPN silicon phototransistors moulded in clear epoxy packages. The wide receiving angle provides relatively even reception over a large area. The side-looking package is designed for easy PCB mounting of slotted optical switches or optical interrupt detectors. This series is mechanically and spectrally matched to the OP140 and OP240 series of infrared emitting diodes.
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