| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 12.3 mΩ |
| Polarity | P-CH |
| Power Dissipation | 2.4 W |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Continuous Drain Current (Ids) | 10.8A |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 2775pF @20V(Vds) |
| Input Power (Max) | 2.4 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.4W (Ta), 69W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ |
General Description
●This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on)and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
●Features
●Max rDS(on)= 12.3mΩat VGS= -10V, ID= -12.7A
●Max rDS(on)= 18.0mΩat VGS= -4.5V, ID= -10.4A
●High performance trench technology for extremely low rDS(on)
●Qualified to AEC Q101
●RoHS Compliant
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