| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 120 V |
| Current Rating | 30.0 A |
| Case/Package | TO-204-2 |
| Output Voltage | 120 V |
| Output Current | 30 A |
| Number of Positions | 2 Position |
| Polarity | NPN |
| Power Dissipation | 200 W |
| Breakdown Voltage (Collector to Emitter) | 120 V |
| Continuous Collector Current | 30A |
| hFE Min | 1000 @20A, 5V |
| Input Power (Max) | 200 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 4MHz (Min) |
| Power Dissipation (Max) | 200000 mW |
| Input Voltage | 5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
● High DC current gain
● Collector-base voltage (Vcbo = 120V)
● Emitter-base voltage (Vcbo = 5V)
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