| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 120 V |
| Current Rating | 30.0 A |
| Case/Package | TO-3 |
| Polarity | N-Channel |
| Power Dissipation | 200000 mW |
| Breakdown Voltage (Collector to Emitter) | 120 V |
| Continuous Collector Current | 30A |
| hFE Min | 1000 @20A, 5V |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 4MHz (Min) |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tray |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
| Minimum Packing Quantity | 100 |
MJ11015 (PNP)
●MJ11012, MJ11016 (NPN)
●30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 −120 VOLTS, 200 WATTS
●. . . for use as output devices in complementary general purpose amplifier applications.
●•High DC Current Gain hFE= 1000 (Min) @ IC −20 Adc
●•Monolithic Construction with Built−in Base Emitter Shunt Resistor
●•Junction Temperature to +200C
ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
22 Pages / 0.07 MByte
ON Semiconductor
1 Pages / 0.03 MByte
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