| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 84.0 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 8.00 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 83W (Ta) |
| Input Capacitance | 3.84 nF |
| Gate Charge | 37.0 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 84.0 A |
| Rise Time | 13.0 ns |
| Input Capacitance (Ciss) | 3845pF @15V(Vds) |
| Input Power (Max) | 1.6 W |
| Power Dissipation (Max) | 83W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
General Description
●This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
●Features
●• 84 A, 30 V. RDS(ON)= 5 mΩ@ VGS= 10 V
● RDS(ON)= 6 mΩ@ VGS= 4.5 V
●• Low gate charge
●•Fast switching
●• High performance trench technology for extremely low RDS(ON)
●Applications
●• DC/DC converter
●• Motor Drives
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