| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-252 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 76A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
General Description
●The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.
●Features
●• 76 A, 30 V RDS(ON)max= 8.0 mΩ@ VGS= 10 V
● RDS(ON)max= 10.4 mΩ@ VGS= 4.5 V
●• Includes SyncFET Schottky body diode
●• Low gate charge (29nC typical)
●• High performance trench technology for extremely low RDS(ON)
●• High power and current handling capability
●.
●Applications
●• DC/DC converter
●• Low side notebook
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