| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 9.00 mΩ |
| Polarity | N-CH |
| Power Dissipation | 70 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 64A |
| Rise Time | 10 ns |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
General Description
●The FDD6670S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode.
●Features
●· 64 A, 30 V RDS(ON)= 9 mW@ VGS= 10 V
● RDS(ON)= 12.5 mW@ VGS= 4.5 V
●· Includes SyncFET Schottky body diode
●· Low gate charge (17nC typical)
●· High performance trench technology for extremely low RDS(ON)
●· High power and current handling capability
●Applications
●· DC/DC converter
●· Motor Drives
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