| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0065 Ω |
| Power Dissipation | 50 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 25 V |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 1080pF @13V(Vds) |
| Input Power (Max) | 50 W |
| Fall Time | 24 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 50 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
The FDD8780 is a N-channel MOSFET produced using Fairchild Semiconductor"s proprietary PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
● Avalanche rated and 100% tested
● Low gate resistance
● 21nC Typical low gate charge
ON Semiconductor
6 Pages / 0.3 MByte
ON Semiconductor
7 Pages / 0.87 MByte
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