| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SC-70-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.3 Ω |
| Power Dissipation | 300 mW |
| Threshold Voltage | 1.2 V |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 7 ns |
| Input Capacitance (Ciss) | 66.5pF @10V(Vds) |
| Input Power (Max) | 300 mW |
| Fall Time | 2.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDG6317NZ is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package.
● Low gate charge
● Gate-source Zener for ESD ruggedness (1.6kV human body model)
● High performance Trench technology for extremely low RDS (ON)
● Compact industry standard surface-mount package
ON Semiconductor
21 Pages / 0.42 MByte
ON Semiconductor
7 Pages / 0.43 MByte
ON Semiconductor
Trans MOSFET N-CH 20V 0.7A 6Pin SC-70 T/R
Fairchild
Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6Pin
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