| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | WDFN-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 60 mΩ |
| Power Dissipation | 1.5 W |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 655pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 37 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMA1023PZ is a PowerTrench® dual P-channel MOSFET designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It has two independent P-channel MOSFETs with low ON-state resistance for minimum conduction losses. When connected in the typical common source configuration, bidirectional current flow is possible. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
● Low profile
● Halogen-free
● ±8V Gate to source voltage
● -3.7A Continuous drain current
● -6A Pulsed drain current
ON Semiconductor
7 Pages / 0.35 MByte
ON Semiconductor
37 Pages / 3.94 MByte
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ON Semiconductor
Trans MOSFET P-CH 20V 3.7A 6Pin MicroFET T/R
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