| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Power-56-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0008 Ω |
| Polarity | N-Channel |
| Power Dissipation | 104 W |
| Threshold Voltage | 1.9 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 60.0 A |
| Rise Time | 24 ns |
| Input Capacitance (Ciss) | 14965pF @15V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 6 mm |
| Size-Height | 1.05 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMS7650 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low RDS (ON). It is suitable for O-ring FET and synchronous rectifier.
● Advanced package and silicon combination for low RDS (ON) and high efficiency
● MSL1 robust package design
● 100% UIL tested
Fairchild
7 Pages / 0.36 MByte
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9 Pages / 0.39 MByte
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4 Pages / 0.51 MByte
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