TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | 80.0 V |
Current Rating | 8.90 A |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.014 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 4 V |
Input Capacitance | 1.99 nF |
Gate Charge | 31.0 nC |
Drain to Source Voltage (Vds) | 80 V |
Breakdown Voltage (Drain to Source) | 80.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 8.90 A |
Rise Time | 14 ns |
Input Capacitance (Ciss) | 1990pF @25V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 13 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS3572 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is suitable for use in primary switch for isolated DC-to-DC converters, high voltage synchronous rectifier for DC bus converters, distributed power and intermediate bus architectures.
● Low miller charge
● Low QRR body diode
● Optimized efficiency at high frequencies
● UIS Capability (single pulse and repetitive pulse)
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