| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 14 mΩ |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 2900pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 23 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
The FDS5670 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It feature faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● Low gate charge
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
ON Semiconductor
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