TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Polarity | P-CH |
Power Dissipation | 2.5 W |
Drain to Source Voltage (Vds) | 20 V |
Continuous Drain Current (Ids) | 3.5A |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 405pF @10V(Vds) |
Input Power (Max) | 1 W |
Fall Time | 21 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.9 mm |
Size-Width | 3.9 mm |
Size-Height | 1.575 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●This P-Channel 2.5V specified MOSFET is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
●Features
●• -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS= -4.5 V
● RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
●• Fast switching speed.
●•High density cell design for extremely low RDS(ON).
●• High power and current handling capability.
●• Qualified to AEC Q101
●• RoHS Compliant
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P-Channel 2.5V Specified MOSFET
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