| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.075 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.2 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 3.3A |
| Rise Time | 1.3 ns |
| Input Capacitance (Ciss) | 315pF @50V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 1.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.2W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.7 mm |
| Size-Width | 6.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDT86113LZ is a N-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been special tailored to minimize the ON-state resistance and yet maintain superior switching performance. The G-S Zener has been added to enhance ESD voltage level.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
● 100% UIL tested
● >3kV Typical HBM ESD protection level
Fairchild
7 Pages / 0.26 MByte
Fairchild
9 Pages / 0.31 MByte
Fairchild
4 Pages / 0.17 MByte
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Trans MOSFET N-CH 100V 3.3A 4Pin(3+Tab) SOT-223 T/R
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