| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 17.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 270 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 190 W |
| Threshold Voltage | 3.75 V |
| Input Capacitance | 2600 pF |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 17.0 A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 2600pF @25V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -50℃ ~ 150℃ (TJ) |
The STP20NK50Z is a N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology. It is achieved through optimization of well-established strip-based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, it is designed to ensure a high level of dV/dt capability for the most demanding applications.
● Extremely high dV/dt capability
● 100% Avalanche tested
● Gate charge minimized
● Very low intrinsic capacitances
ST Microelectronics
7 Pages / 0.24 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
15 Pages / 0.56 MByte
ST Microelectronics
4 Pages / 0.01 MByte
ST Microelectronics
N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH⢠MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
