| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Power Dissipation | 268000 mW |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 268000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail |
| Size-Height | 20.82 mm |
ON Semiconductor
11 Pages / 1.02 MByte
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 268000mW 3Pin(3+Tab) TO-247 Tube
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Trans IGBT Chip N-CH 650V 100A 3Pin TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 340000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 268000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 650V 100A 3Pin(3+Tab) TO-247
ON Semiconductor
650V, 50A Field Stop Trench IGBT
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