| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 268000 mW |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 31 ns |
| Input Power (Max) | 268 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 268000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
ON Semiconductor
9 Pages / 0.98 MByte
ON Semiconductor
2 Pages / 0.13 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 268000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 650V 100A 3Pin TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 340000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 268000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 650V 100A 3Pin(3+Tab) TO-247
ON Semiconductor
650V, 50A Field Stop Trench IGBT
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
