| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 340000 mW |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 53 ns |
| Input Power (Max) | 340 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 340 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.
●Features
●---
● |
● Maximum Junction Temperature : TJ = 175°C
● Positive Temperaure Co-efficient for easy parallel operating
● High current capability
● Low saturation voltage: VCE(sat) = 1.65V(Typ.) @ IC = 50A
● High input impedance
● Tightened Parameter Distribution
● RoHS compliant
● Short-circuit ruggedness: > 5µs @ 25°C
ON Semiconductor
9 Pages / 0.82 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 268000mW 3Pin(3+Tab) TO-247 Tube
Fairchild
Trans IGBT Chip N-CH 650V 100A 3Pin TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 340000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 268000mW 3Pin(3+Tab) TO-247 Rail
Fairchild
Trans IGBT Chip N-CH 650V 100A 3Pin(3+Tab) TO-247
ON Semiconductor
650V, 50A Field Stop Trench IGBT
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