| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 750 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 55 ns |
| Input Power (Max) | 750 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 750000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.32 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FGY75N60SMD is a 1000V Field Stop IGBT with high current capability. This new IGBT is suitable for soft switching applications such as induction cookers and inverterized microwave ovens. FS IGBT provides lower VCE (sat) during on-state and lower switching losses during the turn-off instant. However, since it doesn"t include an intrinsic body diode in common with all other types of IGBTs, it is generally packaged together with an additional Fast Recovery Diode (FRD) for most switching applications. This product is general usage and suitable for many different applications.
● Low saturation voltage
● High input impedance
● High speed switching
● Built-in fast recovery diode
ON Semiconductor
10 Pages / 0.58 MByte
ON Semiconductor
12 Pages / 0.62 MByte
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1 Pages / 0.44 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FGY75N60SMD IGBT Single Transistor, 150A, 1.9V, 750W, 600V, Power 247, 3Pins
ON Semiconductor
Trans IGBT Chip N-CH 600V 150A 750000mW 3Pin Power-247 Tube
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