TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -200 V |
Current Rating | -11.5 A |
Case/Package | TO-263-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 470 mΩ |
Polarity | P-Channel |
Power Dissipation | 3.13 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 11.5 mA |
Rise Time | 195 ns |
Input Capacitance (Ciss) | 1200pF @25V(Vds) |
Input Power (Max) | 3.13 W |
Fall Time | 60 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.13W (Ta), 120W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10.67 mm |
Size-Width | 9.65 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Fairchild
2 Pages / 0.19 MByte
Fairchild
18 Pages / 0.94 MByte
Fairchild
7 Pages / 0.87 MByte
ON Semiconductor
Power Field-Effect Transistor
Fairchild
FAIRCHILD SEMICONDUCTOR FQB12P20TM MOSFET Transistor, P Channel, -11.5A, -200V, 0.36Ω, -10V, -5V
ON Semiconductor
P-Channel QFET® MOSFET -200V, -11.5A, 470mΩ
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