| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 110 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 180 W |
| Drain to Source Voltage (Vds) | 250 V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 25.5 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
Fairchild
7 Pages / 0.4 MByte
ON Semiconductor
250V, 26A, 108mΩ, D2PAK N-Channel UltraFET®, TO-263 2L (D2PAK), 800-TAPE REEL
Fairchild
Trans MOSFET N-CH 250V 25.5A 3Pin TO-263AB T/R
Fairchild
MOSFET N-CH 250V 25.5A D2PAK
ON Semiconductor
MOSFET N-CH 250V 25.5A D2PAK
ON Semiconductor
Trans MOSFET N-CH 250V 25.5A 3Pin TO-263AB T/R
ON Semiconductor
250V, 26A, 108mΩ, D2PAK N-Channel UltraFET®, TO-263 2L (D2PAK), 800-TAPE REEL
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