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FS50R12W2T4BOMA1
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FS50R12W2T4BOMA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:EASY2B-1
Description:Trans IGBT Module N-CH 1200V 83A 335000mW 18Pin Tray
Documentation:FS50R12W2T4BOMA1 Datasheet (1 Pages)FS50R12W2T4BOMA1 Application Note (33 Pages)
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FS50R12W2T4BOMA1 Datasheet PDF (1 Pages)
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FS50R12W2T4BOMA1 Specifications

TYPEDESCRIPTION
Number of Pins18 Pin
Case/PackageEASY2B-1
Power Dissipation335 W
Breakdown Voltage (Collector to Emitter)1200 V
Input Capacitance (Cies)2.8nF @25V
Input Power (Max)335 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)335000 mW
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FS50R12W2T4BOMA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTray
Operating Temperature-40℃ ~ 125℃
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FS50R12W2T4BOMA1 Documents

FS50R12W2T4BOMA1 Datasheet
Infineon
1 Pages / 0.07 MByte
FS50R12W2T4BOMA1 Other Datasheet PDF
Infineon
5 Pages / 0.2 MByte
FS50R12W2T4BOMA1 Application Note
Infineon
33 Pages / 2.24 MByte

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