Product Details
●The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE.
●Applications
● Microwave Radios
● Broadband Radio Systems
● Wireless Local Loop Driver Amplifier
●### Features and Benefits
● Psat Output Power: +26 dBm
● > 40% PAE
● Output IP3: +36 dBm
● High Gain: 21 dB
● Vs: +5V
● Ultra Small Package: MSOP8G
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