| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 16 Pin |
| Voltage Rating (DC) | 8.00 V |
| Current Rating | 65.0 mA |
| Case/Package | SOIC-16 |
| Polarity | NPN |
| Power Dissipation | 150 mW |
| Breakdown Voltage (Collector to Emitter) | 12 V |
| Continuous Collector Current | 0.065A |
| hFE Min | 40 @10mA, 2V |
| hFE Max | 40 @10mA, 2V |
| Input Power (Max) | 150 mW |
| DC Current Gain (hFE) | 130 |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.15 W |
| Supply Voltage (Min) | 12 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 125℃ |
The HFA3127BZ is a NPN ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
● 3.5dB Noise figure (50R) at 1GHz
● <1pA Collector to collector leakage
● Complete isolation between transistors
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