| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 176 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.144 Ω |
| Polarity | N-CH |
| Power Dissipation | 176 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2080 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 23.8A |
| Rise Time | 7.6 ns |
| Input Capacitance (Ciss) | 2080pF @100V(Vds) |
| Fall Time | 5.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 176W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
As an alternative to traditional transistors, the IPP60R160P6XKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 176000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos p6 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Infineon
19 Pages / 3.06 MByte
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5 Pages / 0.1 MByte
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27 Pages / 1.55 MByte
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