| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 125 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The HGTP7N60A4 is a SMPS IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
● 1.9V @ IC = 7A Low saturation voltage
● 75ns Fall time @ TJ = 125°C
● 125W Total power dissipation @ TC = 25°C
ON Semiconductor
8 Pages / 0.23 MByte
ON Semiconductor
2 Pages / 0.13 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
21 Pages / 0.73 MByte
Fairchild
Trans IGBT Chip N-CH 600V 34A 125000mW 3Pin(3+Tab) TO-220AB Rail
Fairchild
Trans IGBT Chip N-CH 600V 14A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 34A 125000mW 3Pin(3+Tab) TO-220AB Tube
Fairchild
Trans IGBT Chip N-CH 600V 34A 125000mW 3Pin(3+Tab) TO-220AB Rail
Fairchild
FAIRCHILD SEMICONDUCTOR HGTP7N60C3D.. IGBT Single Transistor, 14A, 1.6V, 60W, 600V, TO-220AB, 3Pins
Intersil
600V, SMPS Series N-Channel IGBT
ON Semiconductor
Trans IGBT Chip N-CH 600V 14A 60000mW 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 14A 60000mW 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 34A 125000mW 3Pin(3+Tab) TO-220AB Rail
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
