| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 429 W |
| Breakdown Voltage (Collector to Emitter) | 1350 V |
| Input Power (Max) | 429 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 429000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IHW40N135R3FKSA1 IGBT transistor from Infineon Technologies is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1350 V. Its maximum power dissipation is 429000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
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