| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-247-3 |
| Power Rating | 185 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 95 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
Summary of Features:
● Optimized for full rated hard switching turn off typically found in Welding
● Very low V ce(sat) of 1.35V @25°C
● Low E tot
● Soft recovery and low Q rr for diode
● Good R goff controllability
●Benefits:
● Best price/performance ratio
● Good fit to mainstream design of fsw>20kHz
● Low T j & T c for lower heatsink and cooling cost
●Target Applications:
●AC-DC PFC
● stage in:
● Welding
● UPS
● Solar
Infineon
15 Pages / 1.86 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
15 Pages / 1.86 MByte
Infineon
29 Pages / 1.73 MByte
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
Trans IGBT Chip N-CH 650V 55A 188000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Transistor: IGBT; 650V; 35A; 94W; TO247-3; TRENCHSTOP™ 5; Series: H5
Infineon
Trans IGBT Chip N-CH 650V 62A 188000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
Trans IGBT Chip N-CH 650V 60A 185000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
Trans IGBT Chip N-CH 650V 62A 188000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
The reverse conducting TRENCHSTOP™ 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar.
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