| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | DPAK-252 |
| Polarity | N-Channel |
| Power Dissipation | 150 W |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 1820pF @75V(Vds) |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Infineon
12 Pages / 0.97 MByte
Infineon
The IPD200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Infineon
Trans MOSFET N-CH 150V 50A Automotive 3Pin(2+Tab) DPAK T/R
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