| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Operating Voltage | 10V ~ 20V |
| Case/Package | PDIP-8 |
| Power Rating | 1 W |
| Rise/Fall Time | 80ns, 40ns |
| Number of Outputs | 2 Output |
| Output Voltage | 600 V |
| Output Current | 250.500 mA |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 1000 mW |
| Quiescent Current | 70 µA |
| Rise Time | 80 ns |
| Fall Time | 40 ns |
| Fall Time (Max) | 65 ns |
| Fall Time (Max) | 130 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1000 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.92 mm |
| Size-Width | 7.11 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2111PBF is a high voltage high speed power MOSFET and IGBT Driver with dependent high and low-side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead-time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Tolerant to negative transient voltage DV/DT Immune
● Under-voltage lockout for both channels
● CMOS Schmitt-triggered inputs with pull-down
● Matched propagation delay for both channels
● Internally set dead-time
● High side output in phase with input
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