TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 16 Pin |
Operating Voltage | 10V ~ 20V |
Case/Package | SOIC-16 |
Power Rating | 1.25 W |
Rise/Fall Time | 25ns, 17ns |
Number of Outputs | 2 Output |
Output Voltage | 620 V |
Output Current | 2.5 A |
Number of Channels | 2 Channel |
Number of Positions | 16 Position |
Power Dissipation | 1250 mW |
Quiescent Current | 340 µA |
Rise Time | 35 ns |
Fall Time | 25 ns |
Fall Time (Max) | 25 ns |
Fall Time (Max) | 35 ns |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 1250 mW |
Supply Voltage | 3.3V ~ 20V |
Supply Voltage (Max) | 20 V |
Supply Voltage (Min) | 10 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10.5 mm |
Size-Width | 7.6 mm |
Size-Height | 2.35 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2113STRPBF is a high voltage high speed power MOSFET and IGBT high and low-side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout for both channels
● CMOS Schmitt-triggered inputs with pull-down
● Cycle by cycle edge-triggered shutdown logic
● Matched propagation delay for both channels
● Outputs in phase with inputs
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