TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 375 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0021 Ω |
Polarity | N-CH |
Power Dissipation | 375 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 270A |
Rise Time | 182 ns |
Input Capacitance (Ciss) | 8970pF @50V(Vds) |
Fall Time | 189 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 375W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Size-Length | 15.87 mm |
Size-Width | 5.31 mm |
Size-Height | 20.7 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFP3006PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
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60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International Rectifier
MOSFET MOSFET N-CH 60V 257A TO247
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