| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.004 Ω |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 5669 pF |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Continuous Drain Current (Ids) | 202A |
| Rise Time | 190 ns |
| Input Capacitance (Ciss) | 5669pF @25V(Vds) |
| Input Power (Max) | 333 W |
| Fall Time | 33 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 333W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
● Automotive qualified
Infineon
9 Pages / 0.2 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.04 MByte
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1 Pages / 0.14 MByte
International Rectifier
Trans MOSFET N-CH 40V 202A 3Pin (3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=40V, Rds(on)=0.004Ω, Id=162A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0035Ω; ID 202A; TO-220AB; PD 333W; VGS +/-20
International Rectifier
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 2.7Milliohms; ID 190A; TO-220AB; PD 220W; -55de
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