| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 10.0V (min) |
| Case/Package | PDIP-8 |
| Power Rating | 1 W |
| Rise/Fall Time | 80ns, 40ns |
| Number of Outputs | 1 Output |
| Output Voltage | 620 V |
| Output Current | 250 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 1000 mW |
| Fall Time (Max) | 65 ns |
| Fall Time (Max) | 130 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 1000 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 10.92 mm |
| Size-Width | 7.11 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2118PBF is a single-channel Power MOSFET and IGBT Driver features proprietary HVIC and latch immune CMOS technologies enables ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout
● CMOS Schmitt-triggered inputs with pull-down
● Output in phase with input
● High voltage
● High speed
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