| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.007 Ω |
| Polarity | P-CH |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 900 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 16A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 8676pF @10V(Vds) |
| Fall Time | 200 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRF7410PBF is a -12V single P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The package has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques.
● Ultra low on-resistance
● Surface mount
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9 Pages / 0.2 MByte
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20 Pages / 0.49 MByte
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International Rectifier
P-Channel MOSFET, (Vdss = -12V, Rds =7mohm@Vgs=-4.5V, ID = -16A) SO-8
International Rectifier
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 7 Milliohms; ID -16A; SO-8; PD 2.5W; VGS +/-8V
International Rectifier
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 7 Milliohms; ID -16A; SO-8; PD 2.5W; VGS +/-8V
International Rectifier
Trans MOSFET P-CH 12V 16A 8Pin SOIC T/R
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