| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 10.0V (min) |
| Case/Package | SOIC-8 |
| Power Rating | 625 mW |
| Rise/Fall Time | 22ns, 18ns |
| Number of Outputs | 2 Output |
| Output Voltage | 600 V |
| Output Current | 4 A |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 625 mW |
| Quiescent Current | 120 µA |
| Rise Time | 22 ns |
| Fall Time | 18 ns |
| Fall Time (Max) | 30 ns |
| Fall Time (Max) | 38 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 625 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IRS2186SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout for both channels
● Matched propagation delay for both channels
● Logic and power ground ±5V offset
● Lower di/dt gate driver for better noise immunity
● Output source/sink current 4A/4A
Infineon
27 Pages / 1.42 MByte
Infineon
48 Pages / 7.29 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
30 Pages / 0.41 MByte
Infineon
8 Pages / 0.12 MByte
International Rectifier
High and Low Side Driver has output source/sink current capability of 4A and 4Ad
Infineon
600V High and Low Side Driver IC with typical 4A source and 4A sink current of 4A in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
MOSFET DRVR 600V 4A 2Out Hi/Lo Side Non-Inv 8Pin SOIC N T/R
Infineon
600V High and Low Side Driver IC with typical 4A source and 4A sink current of 4A in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V High and Low Side Driver IC with typical 4A source and 4A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V High and Low Side Driver IC with typical 4A source and 4A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.
Infineon
600V High and Low Side Driver IC with typical 4A source and 4A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V High and Low Side Driver IC with typical 4A source and 4A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP.
International Rectifier
Driver 600V 4A 2Out Hi/Lo Side Non-Inv 8Pin SOIC Tube
Infineon
MOSFET DRVR 600V 4A 2Out Hi/Lo Side Non-Inv 8Pin SOIC N Tube
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