| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 5.00V (min) |
| Case/Package | SOIC-8 |
| Rise/Fall Time | 130ns, 50ns |
| Number of Outputs | 2 Output |
| Output Voltage | 620 V |
| Output Current | 0.2 A |
| Number of Positions | 8 Position |
| Power Dissipation | 625 mW |
| Fall Time (Max) | 80 ns |
| Fall Time (Max) | 220 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 625 mW |
| Supply Voltage | 5V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IR2301SPBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout for both channels
● Logic and power ground ±5V offset
● Lower di/dt gate driver for better noise immunity
● Outputs in phase with inputs
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